c opyright ruichips semiconductor co . , ltd re v . a C feb ., 2011 www. ruichips .com ru1h 35s n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 100 v gss gate - source voltage 2 5 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 40 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 160 a t c =25 c 40 i d continuous drain current t c =100 c 2 7 a t c =25 c 111 p d maximum power dissipation t c =100 c 56 w r q jc thermal resistance - junction to case 1.35 c /w drain - source avalanche ratings e as a valanche energy, single pulsed 22 0 m j ? 100 v/ 40 a, r ds ( on ) = 21 m ( tpy.)@ v gs =10v ? super high dense cell design ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? switching application absolute maximum ratings n - channel mosfe t to - 220 to - 220f to - 263 to - 247
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 2 www. ruichips .com ru1h 35s electrical characteristics ( t a =25 c unless otherwise noted) ru1h 35 s symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds =250 m a 100 v v ds = 100 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 1 0 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 2 5 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 16 a 21 25 m w notes : pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature . limited by t jmax , i as = 2 1 a, v dd = 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse widt h 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 16 a, v gs =0v 0.8 1. 2 v t rr reverse recovery time 100 ns q rr reverse recovery charge i sd = 16 a, dl sd /dt=100a/ m s 4 3 0 nc dynamic ch aracteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 2 .8 w c iss input capacitance 2100 c oss output capacitance 250 c rss reverse transfer capacitance v gs =0v, v ds = 25 v, frequency=1.0mhz 115 pf t d ( on ) turn - on delay time 2 2 t r turn - on rise time 76 t d ( off ) turn - off delay time 6 0 t f turn - off fall time v dd = 50 v, r l = 30 w , i ds = 16 a, v gen = 10v, r g = 4.7 w 2 3 ns gate charge characteristics q g total gate charge 4 4 q gs gate - source charge 10 q gd gate - drain charge v ds = 80 v, v gs = 10v, i ds = 16 a 21 nc
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 3 www. ruichips .com ru1h 35s typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperat ure ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse du ration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 4 www. ruichips .com ru1h 35s typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 5 www. ruichips .com ru1h 35s typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempe rature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 6 www. ruichips .com ru1h 35s avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 7 www. ruichips .com ru1h 35s ordering and marking information ru1h 35 package (available) s : to 263 operatin g temperature range c : - 55 to 1 75 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 8 www. ruichips .com ru1h 35s package information to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l 2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 9 www. ruichips .com ru1h 35s customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relati ons contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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